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Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy
Title | Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy |
Publication Type | Journal Article |
Year of Publication | 2010 |
Authors | Bietti, S, Somaschini, C, Sarti, E, Koguchi, N, Sanguinetti, S, Isella, G, Chrastina, D, Fedorov, A |
Journal | Nanoscale Research Letters |
Volume | 5 |
Issue | 10 |
Pagination | 1650 |
Date Published | 2010/07/18 |
ISBN Number | 1556-276X |
Abstract | We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature ≤350°C, thus resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits. |
URL | https://doi.org/10.1007/s11671-010-9689-8 |
Short Title | Nanoscale Research Letters |